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Title: Innovations of Nan Gao in Silicon on Insulator Technology
Introduction
Nan Gao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon on insulator (SOI) structures. With a total of three patents to his name, Gao's work has advanced the understanding and manufacturing processes of SOI technology.
Latest Patents
Nan Gao's latest patents include innovative methods for creating silicon on insulator structures. One of his notable patents describes a method that involves providing a bonded structure consisting of a first substrate, a second substrate, and an insulating buried layer. The process includes peeling off a layer of the first substrate to obtain a first film, followed by a two-step etching process at different temperatures to achieve the desired thickness and planarization of the film. Another patent outlines a similar method that incorporates isothermal annealing technology at sub-atmospheric pressure, further enhancing the efficiency of SOI structure fabrication.
Career Highlights
Throughout his career, Nan Gao has worked with reputable organizations such as Zing Semiconductor Corporation and the Chinese Academy of Sciences. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research and development in semiconductor technologies.
Collaborations
Some of Nan Gao's notable coworkers include Xing Wei and Zhongying Xue. Their collaborative efforts have played a crucial role in advancing the projects they have worked on together.
Conclusion
Nan Gao's contributions to silicon on insulator technology have positioned him as a key figure in the semiconductor industry. His innovative patents and collaborative work continue to influence advancements in this critical field.