Company Filing History:
Years Active: 1992
Title: Nami Kimura: Innovator in Semiconductor Technology
Introduction
Nami Kimura is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique process for producing semiconductor devices.
Latest Patents
Nami Kimura holds 1 patent for her invention titled "Formation of shallow junction by implantation of dopant into partially." This patent describes a process in which a predetermined electroconductive type ion is implanted into a semiconductor substrate. The process involves implanting a different ion into the substrate to create a disordered region, which prevents microchanneling of the later implanted electroconductive type ion.
Career Highlights
Nami Kimura has built a successful career at Fujitsu Corporation, where she has been instrumental in advancing semiconductor technologies. Her expertise and innovative approach have positioned her as a key figure in her field.
Collaborations
Throughout her career, Nami has collaborated with notable colleagues, including Masataka Kase and Yoshio Kikuchi. These partnerships have further enhanced her contributions to semiconductor research and development.
Conclusion
Nami Kimura's work in semiconductor technology exemplifies the impact of innovation in the industry. Her patent and career achievements highlight her role as a leading inventor in this vital field.