The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Sep. 06, 1990
Fujitsu Limited, Kawasaki, JP;
Abstract
A process for producing a semiconductor device, in which a predetermined electroconductive type ion is implanted into a semiconductor substrate, the process comprising the steps of: prior to the implantation of a predetermined electroconductive type ion, implanting an ion different from the electroconductive type ion into the semiconductor substrate having a crystalline structure, to form a disordered region having a degree of disorder such that microchanneling of the later implanted electroconductive type ion does not substantially occur, and that the disordered region is partially crystalline; and implanting the predetermined electroconductive type ion into the disordered region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile