Taejon, South Korea

Nam-Sik Yoon

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2001.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 58(Granted Patents)


Company Filing History:

goldMedal1 out of 834,453 
Other
 patents

Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Nam-Sik Yoon: Innovator in Antenna Technology

Introduction

Nam-Sik Yoon is a prominent inventor based in Taejon, South Korea. He has made significant contributions to the field of antenna technology, particularly in the generation of inductively coupled plasma. His innovative approach has the potential to enhance various applications in processing large specimens.

Latest Patents

Nam-Sik Yoon holds 1 patent for his invention titled "Antenna device for generating inductively coupled plasma." This invention relates to a low impedance antenna device designed to generate a substantial quantity of inductively coupled plasma. The device is capable of processing large specimens while ensuring a uniform distribution of plasma density. It comprises a high-frequency power source, a first antenna for receiving power, and a second antenna connected in parallel to maintain a resonant state.

Career Highlights

Throughout his career, Nam-Sik Yoon has demonstrated a commitment to advancing antenna technology. His work has been instrumental in developing devices that improve the efficiency and effectiveness of plasma generation. His innovative designs have garnered attention in the scientific community.

Collaborations

Nam-Sik Yoon has collaborated with notable colleagues, including Yong-Kwan Lee and Pyung-Woo Lee. These partnerships have contributed to the advancement of research and development in their respective fields.

Conclusion

Nam-Sik Yoon is a distinguished inventor whose work in antenna technology has the potential to revolutionize the processing of large specimens. His contributions to the field are noteworthy and reflect his dedication to innovation.

Profile summary based on public USPTO records.
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