Nak-Hyun Lim

Title: Nak-Hyun Lim: Innovator in Non-Volatile Memory Technology

Introduction

Nak-Hyun Lim is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of non-volatile memory technology. With a total of 4 patents to his name, Lim's work has advanced the capabilities of integrated circuit memory cells.

Latest Patents

Among his latest patents, Lim has developed variable resistance non-volatile memory cells and methods for fabricating them. These patents disclose innovative methods for creating integrated circuit memory cells. One method involves forming an ohmic layer on a conductive structure and extending it along the sidewall of an opening in an insulation layer. An electrode layer is then formed on this ohmic layer. Additionally, a variable resistivity material is created on the insulation layer, which is electrically connected to the electrode layer. Another patent details the fabrication of integrated circuit memory cells by forming a cup-shaped electrode on the sidewalls of an opening in an insulation layer. This method ensures that the insulation filling member is formed at low temperatures to maintain the resistance of the ohmic layer.

Career Highlights

Lim is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in enhancing the performance and efficiency of memory cells used in various electronic devices.

Collaborations

Throughout his career, Lim has collaborated with notable colleagues, including Shin-Jae Kang and Gyu-Hwan Oh. These collaborations have further enriched his research and development efforts in the field.

Conclusion

Nak-Hyun Lim's contributions to non-volatile memory technology exemplify his innovative spirit and dedication to advancing electronic memory solutions. His patents reflect a commitment to improving the functionality and efficiency of integrated circuit memory cells.