Hong Kong, China

Nai Wen Tseng

This inventor holds 1 USPTO granted patent. Top assignee: Nano and Advanced Materials Institute Limited. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nai Wen Tseng. Retrieved from https://idiyas.com/inventor/nai-wen-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Nai Wen Tseng

Introduction

Nai Wen Tseng is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of materials science, particularly in the synthesis of advanced materials. His work has implications for various applications, including organic photovoltaics.

Latest Patents

Nai Wen Tseng holds a patent for a "Method for synthesis of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and fullerene derivatives." This innovative method relates to the synthesis of PCBM and fullerene derivatives, achieving a yield of at least 40%. This patent highlights his expertise in developing efficient synthesis techniques for complex materials.

Career Highlights

Tseng is affiliated with the Nano and Advanced Materials Institute Limited, where he applies his knowledge and skills to advance research in nanotechnology and materials science. His work at this institute has positioned him as a key figure in the development of new materials that can enhance various technological applications.

Collaborations

He has collaborated with notable colleagues, including Jianle Zhuang and Yong Yu, to further his research and innovation efforts. These collaborations have contributed to the advancement of knowledge in their respective fields.

Conclusion

Nai Wen Tseng's contributions to the field of materials science through his innovative patent and collaborative efforts underscore his importance as an inventor. His work continues to influence advancements in nanotechnology and materials research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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