Location History:
- Radeberg, DE (2014)
- Radeburg, DE (2017)
Company Filing History:
Years Active: 2014-2017
Title: Nadja Zakowsky: Innovator in Semiconductor Technology
Introduction
Nadja Zakowsky is a prominent inventor based in Radeburg, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors (FETs). With a total of two patents to her name, her work has had a substantial impact on manufacturing processes and device performance.
Latest Patents
Zakowsky's latest patents include innovative methods for epitaxial channel formation and superior stability of characteristics in transistors. The first patent focuses on a method for forming FETs in a multiple wafers per batch epi-reactor. This method involves providing substrates with a flat outer surface, modifying it to create a convex-outward curved surface, and forming an epitaxial semiconductor layer on this surface. This approach results in a more uniform thickness of the epi-layer, which enhances the manufacturing yield and reduces costs. The second patent addresses the formation of sophisticated transistors using a high-k metal gate electrode structure. It introduces a superior wet cleaning process that minimizes the modification of sensitive gate materials, thereby improving the stability of the threshold voltage across transistors of varying widths.
Career Highlights
Nadja Zakowsky is currently employed at Globalfoundries Inc., where she continues to push the boundaries of semiconductor innovation. Her expertise in the field has led to advancements that are crucial for the development