Nadium F Haddad

Title: The Innovative Contributions of Nadium F Haddad

Introduction

Nadium F Haddad is a notable inventor based in Oakton, Virginia. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced manufacturing processes for MOSFETs. His work has implications for the efficiency and performance of electronic devices.

Latest Patents

Haddad holds a patent titled "Method of making gate overlapped lightly doped drain for buried channel." This patent describes a process to form poly sidegate LDD structures on buried channel MOSFETs. The method involves forming a polysilicon spacer on the gate after source/drain processing, which is later shorted to the main gate by the implantation of neutral impurities. This innovative process is particularly suited for Silicon-On-Insulator (SOI) technology, enhancing the performance of semiconductor devices.

Career Highlights

Throughout his career, Nadium F Haddad has worked with Loral Federal Systems Company, where he has contributed to various projects in the semiconductor field. His expertise in MOSFET technology has positioned him as a valuable asset in the industry.

Collaborations

Haddad has collaborated with notable colleagues, including Frederick T Brady and Charles P Breiten. These partnerships have fostered innovation and have led to advancements in semiconductor manufacturing processes.

Conclusion

Nadium F Haddad's contributions to semiconductor technology through his patent and work at Loral Federal Systems Company highlight his role as an influential inventor. His innovative methods continue to impact the field, paving the way for future advancements in electronic devices.