The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1994
Filed:
Apr. 30, 1993
Applicant:
Inventors:
Frederick T Brady, Chantilly, VA (US);
Charles P Breiten, Culpeper, VA (US);
Nadium F Haddad, Oakton, VA (US);
William G Houston, Elkwood, VA (US);
Oliver S Spencer, Manassas, VA (US);
Steven J Wright, Fredericksburg, VA (US);
Assignee:
Loral Federal Systems Company, Bethesda, MD (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 21 ; 437 24 ; 148D / ;
Abstract
A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.