Shanghai, China

Na Zhao

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations of Na Zhao in Semiconductor Technology

Introduction

Na Zhao is an accomplished inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving the efficiency and performance of semiconductor devices.

Latest Patents

Na Zhao holds a patent for a semiconductor device and method of making it. This patent discloses a novel approach to semiconductor technologies. The invention involves leading out a transistor's source and drain by forming vias or contact holes in an insulator layer. These holes are filled with a metal-semiconductor compound, which minimizes resistance and enhances performance. The design ensures good adhesion properties and prevents structural damage to the dielectric material.

Career Highlights

Na Zhao is affiliated with Fudan University, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its practical applications in the electronics industry. Zhao's innovative methods are paving the way for more efficient semiconductor devices.

Collaborations

Na Zhao collaborates with notable colleagues, including Dongping Wu and Zhaoyang Pi. Their combined expertise contributes to the advancement of semiconductor research and development.

Conclusion

Na Zhao's contributions to semiconductor technology exemplify the importance of innovation in this field. His patent reflects a commitment to enhancing device performance and efficiency. Through his work at Fudan University, Zhao continues to influence the future of semiconductor technologies.

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