Xi'an, China

Na Yi


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Biography of Na Yi

Introduction

Na Yi is an accomplished inventor based in Xi'an, China. He has made significant contributions to the field of material technology, particularly in the processing of nitrogen-doped wafers. His innovative approach has led to advancements in the manufacturing processes of semiconductor materials.

Latest Patents

Na Yi holds a patent for a "Processing method and system for reducing warp of nitrogen-doped wafer." This patent describes a method that involves dividing a nitrogen-doped crystal ingot into segments based on nitrogen content distribution. The method ensures that each segment is processed under specific conditions to prevent warping during wire sawing, ultimately leading to the production of high-quality wafers.

Career Highlights

Na Yi is currently employed at Xi'an Eswin Material Technology Co., Ltd., where he applies his expertise in material processing. His work has been instrumental in enhancing the efficiency and quality of semiconductor manufacturing.

Collaborations

Throughout his career, Na Yi has collaborated with notable colleagues, including Rongkai Linghu and Wen Zhang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Na Yi's contributions to the field of material technology and his innovative patent demonstrate his commitment to advancing the industry. His work continues to impact the development of semiconductor materials, making him a valuable figure in the field.

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