The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Sep. 21, 2022
Applicant:

Xi'an Eswin Material Technology Co., Ltd., Xi'an, CN;

Inventors:

Na Yi, Xi'an, CN;

Rongkai Linghu, Xi'an, CN;

Wen Zhang, Xi'an, CN;

Ying Lu, Xi'an, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B28D 5/04 (2006.01); B28D 5/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
B28D 5/045 (2013.01); B28D 5/0064 (2013.01); C30B 29/06 (2013.01);
Abstract

A processing method for reducing warp of a nitrogen-doped wafer includes dividing a to-be-cut nitrogen-doped crystal ingot into a plurality of to-be-processed crystal ingot segments according to nitrogen content distribution, where each to-be-processed ingot segment corresponds to a nitrogen content range. The method further includes determining a processing condition corresponding to each to-be-processed crystal ingot segment according to correspondences between nitrogen content ranges and processing conditions, where the processing condition enables the corresponding to-be-processed crystal ingot segment to be prevented from warping during wire sawing; and performing cutting processing respectively on the each to-be-processed crystal ingot segment by using the processing condition corresponding to each to-be-processed crystal ingot segment, thereby obtaining a wafer by cutting the to-be-cut nitrogen-doped crystal ingot.


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