Na Ren

Title: Na Ren - Innovator in Power MOSFET Technology

Introduction

Na Ren is a notable inventor based in Zhejiang, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. His innovative designs aim to enhance the efficiency and performance of electronic devices.

Latest Patents

Na Ren holds a patent for a trench-gate power MOSFET with an optimized layout. This invention includes a substrate and a first semiconductor region with a specific doping type. The design features mutually separated trench isolation gate structures, which consist of a gate oxide layer and a gate electrode. Additionally, it incorporates a second and third semiconductor region formed between adjacent trench isolation gate structures, along with a first shielding region under each third semiconductor region, connecting multiple trench isolation structures.

Career Highlights

Na Ren is affiliated with the Zju-Hangzhou Global Scientific and Technological Innovation Center. His work at this institution has allowed him to focus on advancing semiconductor technologies and contributing to innovative solutions in the industry.

Collaborations

Na Ren collaborates with talented individuals such as Kuang Sheng and Zhengyun Zhu, who contribute to his projects and research endeavors.

Conclusion

Na Ren's contributions to power MOSFET technology exemplify his innovative spirit and dedication to advancing semiconductor solutions. His work continues to impact the field positively.