Suwon, South Korea

Myung-sik Han

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Myung-sik Han. Retrieved from https://idiyas.com/inventor/myung-sik-han

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Myung-sik Han: A Visionary in Innovation

Introduction:

Myung-sik Han is a pioneering inventor based in Suwon, South Korea. With a profound passion for innovation and a commitment to pushing boundaries, he has made significant contributions to the field of non-volatile memory devices. His inventive spirit and dedication to excellence have solidified his position as a true visionary in the world of technology.

Latest Patents:

Myung-sik Han holds a notable patent titled "Method of fabrication on a gate pattern of a non-volatile memory device." This patent outlines a method for fabricating a non-volatile memory device, showcasing his expertise in semiconductor technology and fabrication processes.

Career Highlights:

Throughout his career at Samsung Electronics Co., Ltd., Myung-sik Han has been instrumental in driving innovation in the semiconductor industry. His groundbreaking work in the development of non-volatile memory devices has helped pave the way for advancements in storage technology.

Collaborations:

Myung-sik Han has collaborated closely with esteemed colleagues such as Ja-hyung Han and Kyung-Hyun Kim. Together, they have worked tirelessly to push the boundaries of innovation and address complex challenges in the development of cutting-edge semiconductor technologies.

Conclusion:

In conclusion, Myung-sik Han stands as a true visionary in the world of innovation, with a legacy that continues to inspire future generations of inventors and creators. His passion for pushing the boundaries of what is possible serves as a testament to the power of human ingenuity and the impact it can have on the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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