Icheon-si, South Korea

Myung-Kyu Ahn


Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Ichon-shi, KR (2006)
  • Kyoungki-do, KR (2006)
  • Icheon-si, KR (2009 - 2011)

Company Filing History:


Years Active: 2006-2011

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4 patents (USPTO):Explore Patents

Title: Myung-Kyu Ahn: Innovator in Flash Memory Technology

Introduction

Myung-Kyu Ahn is a prominent inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of flash memory devices. With a total of 4 patents to his name, Ahn's work has had a substantial impact on the industry.

Latest Patents

Ahn's latest patents include innovative methods for fabricating flash memory devices. One of his notable patents is a method of fabricating a flash memory device that involves polishing a hard mask layer to reduce surface roughnesses. This process helps prevent the loss of a SAC nitride layer during subsequent polishing, thereby improving the performance of transistors. Another significant patent describes a method of manufacturing a flash memory device, which includes forming a tunnel oxide layer and a polysilicon layer over a semiconductor substrate, followed by an etch process to create a pattern and trench.

Career Highlights

Myung-Kyu Ahn is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work at Hynix has allowed him to focus on advancing flash memory technology, contributing to the company's reputation for innovation and quality.

Collaborations

Ahn has collaborated with several talented individuals in his field, including coworkers Sung-Kwon Lee and Sang-Ik Kim. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Myung-Kyu Ahn's contributions to flash memory technology exemplify his dedication to innovation in the semiconductor industry. His patents reflect a commitment to improving device performance and reliability. Ahn's work continues to influence the future of memory technology.

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