The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Dec. 27, 2007
Applicants:

Myung-kyu Ahn, Icheon-si, KR;

IN NO Lee, Icheon-si, KR;

Inventors:

Myung-Kyu Ahn, Icheon-si, KR;

In No Lee, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure relates to a method of fabricating a flash memory device. According to the present disclosure, a hard mask layer to which surface roughnesses have been transferred by a metal silicide layer, including the surface roughness, is polished before or during a gate etch process in order to diminish the surface roughnesses. Thus, although surface roughnesses exist in the metal silicide layer, a SAC nitride layer formed over a gate can be prevented from being lost in a subsequent polishing process of a pre-metal dielectric layer, which is performed in order to form a contact plug. Accordingly, a hump phenomenon of a transistor can be improved.


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