Bucheon, South Korea

Myung-Jae Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Myung-Jae Lee. Retrieved from https://idiyas.com/inventor/myung-jae-lee-ntc3zirh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Myung-Jae Lee and Semiconductor Memory Innovation.

Introduction

Myung-Jae Lee is an inventor associated with Bucheon, South Korea, and Samsung Electronics Co., Ltd. The supplied information identifies one patent associated with Lee.

Latest Patents

Lee’s listed patent is “Semiconductor Memory Device and Method of Reducing Consumption of Standby Current Therein.” The invention describes a semiconductor memory device with a memory array containing bit lines and dummy bit lines. A bias application unit supplies different voltage levels to the dummy bit lines, while a standby current measuring unit measures current between selected bit lines and dummy bit lines. The measurements correspond to the applied bias voltages and support reducing standby-current consumption. Lee is associated with 1 patent in the information provided.

Career Highlights

The available details connect Lee’s patent work with Samsung Electronics Co., Ltd. The listed invention focuses on managing standby current in semiconductor memory devices.

Collaborations

The supplied information names Jong Hyoung Lim and Sang Seok Kang as Lee’s coworkers. It does not specify their roles in the patent or describe particular collaborations.

Conclusion

Myung-Jae Lee’s listed patent addresses standby-current reduction in semiconductor memory, reflecting a focused contribution to memory-device design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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