Myung Hun Ju

Title: Myung Hun Ju: Innovator in 3D NAND Technology

Introduction

Myung Hun Ju is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced dielectric film stacks for 3D NAND structures. With a total of 2 patents to his name, Ju's work is instrumental in enhancing the performance and efficiency of NAND flash memory.

Latest Patents

One of Myung Hun Ju's latest patents is focused on the VNAND tensile thick TEOS oxide. This patent describes an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. The method involves providing a substrate with a gate stack, forming a first oxide layer using a specific RF power and a process gas that includes TEOS and an oxygen-containing gas, and subsequently forming a second oxide layer using a different RF power and a process gas that includes silane and another oxygen-containing gas.

Career Highlights

Myung Hun Ju is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work at Applied Materials has allowed him to push the boundaries of technology in the field of NAND flash memory, contributing to advancements that are crucial for modern electronic devices.

Collaborations

Throughout his career, Ju has collaborated with several talented individuals, including Michael Wenyoung Tsiang and Praket Prakash Jha. These collaborations have fostered innovation and have been pivotal in the development of new technologies in the semiconductor sector.

Conclusion

Myung Hun Ju's contributions to the field of semiconductor technology, particularly in 3D NAND structures, highlight his role as an influential inventor. His patents and work at Applied Materials, Inc. continue to shape the future of memory technology.