Seoul, South Korea

Myong-Ku Kang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Myong-Ku Kang. Retrieved from https://idiyas.com/inventor/myong-ku-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Myong-Ku Kang: Pioneer in Dynamic Random Access Memory Technology

Introduction

Myong-Ku Kang is an innovative inventor based in Seoul, South Korea, renowned for his significant contributions to memory technology. With a strong focus on improving the reliability of dynamic random access memory (DRAM) cells, his work addresses critical issues in the semiconductor field.

Latest Patents

Myong-Ku Kang holds a patent for a novel process for manufacturing a dynamic random access memory cell. This patent outlines a method aimed at reducing the occurrence of soft errors in memory devices—errors triggered by alpha particles emitted from uranium-series materials that are present during the fabrication of memory chips. His innovative process involves the strategic formation of boron layers underneath the storage capacitor region and the drain region of the transistor associated with a bit line. This design creates a barrier against minority carriers instigated by alpha particles in the substrate. Furthermore, his process enhances the capacitance of the storage capacitor by expanding this region toward the field oxide layer, effectively making the impact of soft errors negligible.

Career Highlights

Throughout his career, Myong-Ku Kang has demonstrated a strong commitment to advancing the field of memory technology. Working at Samsung Electronics Co., Ltd., he has collaborated with a skilled team to enhance the functionality and reliability of semiconductor devices. His successful patent reflects his expertise and innovative approach to overcoming challenges in memory fabrication processes.

Collaborations

Myong-Ku Kang has worked alongside esteemed colleagues such as Byong-Hyun Park and Won-Hee Jang. Their collective efforts emphasize a collaborative spirit in research and development initiatives within the semiconductor industry, helping to drive forward advancements in memory technology.

Conclusion

Myong-Ku Kang stands out as a valuable inventor in the field of dynamic random access memory technology. His patent not only showcases his innovative thinking but also sets a precedent for future advancements aimed at enhancing the performance and reliability of memory devices. As the technology continues to evolve, inventors like Kang play a crucial role in shaping the future of semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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