This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Myeongsik Ryu and Memory Device Innovation.
Introduction
Myeongsik Ryu is an inventor based in Suwon-si, South Korea. His patent work includes a memory-device design focused on biasing dummy global bitlines.
Latest Patents
Ryu is associated with 1 patent, titled “Memory Device for Biasing Dummy Global Bitline.” The invention describes a memory cell region with first and second global bitlines near its edges and dummy global bitlines in its central portion. A bitline sense amplifier connects to these bitlines. A first layer in the memory cell region connects to a second layer in the sense amplifier region and applies a bias voltage to each dummy global bitline.
Career Highlights
Ryu works at Samsung Electronics Ltd. His patent reflects work on memory-device architecture and the electrical biasing of dummy bitlines.
Collaborations
The provided information identifies Kyoungmin Kim and Inseok Baek as Ryu’s coworkers.
Conclusion
Myeongsik Ryu’s patent describes a memory-device arrangement that applies bias voltage to dummy global bitlines, contributing to Samsung Electronics’ work in memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile