Muhib M Khan

Title: Innovations of Muhib M Khan

Introduction

Muhib M Khan is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to multilayer structures.

Latest Patents

Muhib M Khan holds a patent for the "TiW barrier metal process." This improved process is designed for forming a multilayer structure suitable for tape automated bonding or for creating contacts. The process involves forming a first layer of aluminum on a substrate, followed by a second layer of a TiW alloy, and finally a third layer of gold. A key improvement in this process is the annealing of the TiW alloy layer in an inert atmosphere at a temperature below 500 degrees Celsius. This step is crucial for forming a film of an Al–TiW phase at the interface between the aluminum and the TiW alloy, enhancing the overall performance of the multilayer structure.

Career Highlights

Muhib M Khan is currently employed at Advanced Micro Devices Corporation, where he continues to work on innovative technologies in the semiconductor industry. His expertise and contributions have been instrumental in advancing the capabilities of multilayer structures used in various applications.

Collaborations

Some of his notable coworkers include Jeremias D Romero and Homi Fatemi, who have collaborated with him on various projects within the company.

Conclusion

Muhib M Khan's innovative work, particularly in the TiW barrier metal process, showcases his significant impact on semiconductor technology. His contributions continue to influence advancements in the field, demonstrating the importance of innovation in driving progress.