Muhammed A Khan

Title: Innovations of Muhammed A Khan

Introduction

Muhammed A Khan is an accomplished inventor based in White Bear Lake, Minnesota. He has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors. His work has implications for various applications in modern technology.

Latest Patents

Khan holds a patent for a high electron mobility transistor that utilizes GaN/Al.sub.x Ga.sub.1-x N heterojunctions. This innovative transistor takes advantage of the increased mobility provided by a two-dimensional electron gas. The structures are deposited on basal plane sapphire using low-pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm.sup.2 per volt second at room temperature, compared to 56 cm.sup.2 per volt second at 180 degrees Kelvin. At 77 degrees Kelvin, the mobility decreases to 19 cm.sup.2 per volt second, while the heterostructure mobility increases to 1,600 cm.sup.2 per volt second and saturates at 4 degrees Kelvin.

Career Highlights

Khan is currently employed at Apa Optics, Inc., where he continues to innovate in the field of optics and electronics. His work has been instrumental in advancing the performance of electronic devices through improved transistor technology.

Collaborations

Khan has collaborated with notable colleagues, including James M VanHove and Jon N Kuznia. These partnerships have contributed to the success of his projects and the advancement of technology in their respective fields.

Conclusion

Muhammed A Khan's contributions to the field of electronics, particularly through his patented high electron mobility transistor, highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of electronic devices and systems.