Sungai Petani, Malaysia

Muhammad Muhammat Sanusi

USPTO Granted Patents = 4 

Average Co-Inventor Count = 6.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2023

where 'Filed Patents' based on already Granted Patents

4 patents (USPTO):

Title: Muhammad Muhammat Sanusi: Innovating the Semiconductor Industry

Introduction:

Muhammad Muhammat Sanusi, a talented inventor and engineer, hails from Sungai Petani, Malaysia. With a passion for semiconductor technology, Sanusi has made significant contributions to the field through his numerous patents and innovative approaches. Working at Infineon Technologies AG, his groundbreaking work has propelled the company to new heights in the world of semiconductor devices. In this article, we will explore his latest patents, career highlights, and notable collaborations.

Latest Patents:

Among Sanusi's recent patents, two remarkable innovations stand out:

1. Semiconductor device with a heterogeneous solder joint and method for fabricating the same:

This patent describes a method for fabricating a semiconductor device with a heterogeneous solder joint. The process involves soldering a semiconductor die to a coupled element with a first solder joint, consisting of a solder material comprising a first metal composition. Additionally, a coating including a second metal composition, different from the first metal composition, partially covers the solder material. The second metal composition boasts higher stiffness and/or melting point, enhancing the device's overall performance and reliability.

2. Porous Cu on Cu surface for semiconductor packages:

This invention focuses on a semiconductor package that incorporates microporous Cu surfaces. The package consists of metal leads and a semiconductor die joined by an interconnect. The surfaces of the metal leads, metallized surface of the die, and/or the interconnect, all containing Cu, exhibit exceptional thermal conductivity (in the range of 340 to 400 W/mK) and electrical conductivity (80 to 110% IACS). The integration of controlled micropores with diameters ranging from 1 μm to 10 μm enhances the package's thermal dissipation capabilities.

Career Highlights:

With an impressive portfolio of four patents, Sanusi has made his mark in the semiconductor industry. His expertise and dedication to pushing boundaries have earned him recognition as an invaluable asset at Infineon Technologies AG. As an accomplished engineer, he has consistently delivered innovative solutions, allowing Infineon Technologies AG to maintain its position as a leader in the semiconductor field.

Collaborations:

Throughout his career, Sanusi has had the opportunity to collaborate with esteemed colleagues, expanding his knowledge and expertise. Two notable coworkers at Infineon Technologies AG are Swee Kah Lee and Fong Mei Lum. Collaborative efforts have undoubtedly played a significant role in Sanusi's success, fostering an environment of collective growth and innovation.

Conclusion:

Muhammad Muhammat Sanusi's prowess in semiconductor technology and his remarkable contributions to the field through his patents reflect his dedication and inventive mindset. Working at Infineon Technologies AG, Sanusi has brought about transformative advancements, solidifying his place among the industry's top innovators. With his constant pursuit of excellence, we can expect even more breakthrough inventions in the future from this brilliant mind.

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