Company Filing History:
Years Active: 2025
Title: Muhammad Ali Johar: Innovator in Gallium Nitride Technology
Introduction
Muhammad Ali Johar is a prominent inventor based in Urbana, IL (US). He has made significant contributions to the field of semiconductor technology, particularly in the synthesis of gallium nitride (GaN) on silicon substrates. His innovative work has the potential to advance various applications in electronics and optoelectronics.
Latest Patents
Johar holds a patent for a method titled "Large area synthesis of cubic phase gallium nitride on silicon." This patent describes a wafer that includes a buried substrate and a first layer of silicon (100) with silicon sidewalls (111) forming U-shaped grooves. The invention also features a second layer of patterned oxide that provides vertical sidewalls for the grooves, a third layer of a buffer, and multiple GaN-based structures formed within the grooves. Each of these structures includes cubic gallium nitride formed at merged growth fronts of hexagonal gallium nitride extending from the silicon sidewalls.
Career Highlights
Muhammad Ali Johar is affiliated with the University of Illinois, where he conducts research and development in semiconductor materials. His work has garnered attention for its innovative approach to enhancing the properties of gallium nitride, which is crucial for high-performance electronic devices.
Collaborations
Johar collaborates with notable colleagues, including Can Bayram and Jae Kwon Lee, who contribute to his research endeavors. Their combined expertise fosters a dynamic research environment that promotes advancements in semiconductor technology.
Conclusion
Muhammad Ali Johar's contributions to gallium nitride technology exemplify the innovative spirit of modern inventors. His work not only enhances the understanding of semiconductor materials but also paves the way for future technological advancements.