This inventor holds 2 USPTO granted patents. Top assignee: University of Arkansas. Active years: 1990-1993.
Company Filing History:
Years Active: 1990-1993
Title: Innovations of Muhammad A Khaliq
Introduction
Muhammad A Khaliq is a notable inventor based in Mankato, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon nitride applications. With a total of 2 patents, his work has advanced the understanding and implementation of materials in electronic devices.
Latest Patents
Khaliq's latest patents focus on the use of silicon nitride as a gate dielectric in MOS devices. The first patent describes a method where a thin film layer of silicon nitride is deposited on a silicon substrate using plasma enhanced chemical vapor deposition techniques. This layer is then stabilized through a post-deposition rapid thermal annealing process, which occurs at temperatures ranging from about 600°C to about 700°C for durations between 3 to 30 seconds. The second patent outlines a similar annealing process aimed at stabilizing PECVD silicon nitride for its application in electronic devices.
Career Highlights
Khaliq is affiliated with the Board of Trustees of the University of Arkansas, where he contributes his expertise in semiconductor materials. His work has been instrumental in enhancing the performance and reliability of electronic components.
Collaborations
Khaliq collaborates with various professionals in his field, including his coworker William David Brown. Their joint efforts aim to push the boundaries of semiconductor technology and improve the applications of silicon nitride.
Conclusion
Muhammad A Khaliq's innovative work in silicon nitride applications has made a significant impact on the semiconductor industry. His patents reflect a commitment to advancing technology and improving electronic device performance.