The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1990
Filed:
Feb. 09, 1990
Applicant:
Inventors:
William D Brown, Fayetteville, AR (US);
Muhammad A Khaliq, Mankato, MN (US);
Assignee:
The University of Arkansas, Little Rock, AR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437242 ; 148D / ; 437241 ; 437243 ; 437247 ; 437174 ; 437 94 ; 437942 ;
Abstract
A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
Brown, William. (1990). Annealing process to stabilize pecvd silicon nitride for application as (U.S. Patent No. 4962065). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4962065
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile