Mu-Yi Lin

Title: Mu-Yi Lin: Memory Device Innovation

Introduction

Mu-Yi Lin is an inventor based in Hsinchu City, Taiwan. His patent work includes a memory-device design and a method for manufacturing it.

Latest Patents

Lin is associated with 1 patent, titled “Memory Device and Manufacturing Method Thereof.” The invention describes a memory device with a transistor and two metal layers positioned above it. The transistor has a gate layer, a source region, and a drain region on opposite sides of the gate. In the first metal layer, a bit line connects electrically to the transistor’s drain region. The second metal layer includes a gate metal layer connected to the transistor’s gate and a word line surrounding that gate metal layer.

Career Highlights

Lin’s listed patent is assigned to Hon Hai Precision Industry Co., Ltd. It reflects work on memory-device structure and manufacturing.

Collaborations

Lin’s listed coworker is Chao-Wei Kuo. Their association provides context for the collaborative environment surrounding the patent.

Conclusion

Mu-Yi Lin’s patent documents a memory-device design that integrates transistor connections with layered metal structures, highlighting his contribution to memory technology.