Taipei, Taiwan

Mu-Shih Yeh


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2017-2019

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2 patents (USPTO):Explore Patents

Title: Mu-Shih Yeh: Innovator in Fin Field Effect Transistor Technology

Introduction

Mu-Shih Yeh is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Fin Field Effect Transistor (FinFET) devices. With a total of 2 patents, his work has been instrumental in advancing the capabilities of modern electronic devices.

Latest Patents

Mu-Shih Yeh's latest patents include innovative methods for forming semiconductor device structures. One notable patent describes a FinFET device structure with an ultra-thin body. This invention outlines a method that involves forming an oxide layer over a substrate and subsequently creating a semiconductor layer over this oxide layer. The process includes patterning the semiconductor layer to establish a fin structure and removing a portion of this structure to create a U-shaped trench. Additionally, a gate structure is formed on the U-shaped trench, enhancing the device's performance.

Another patent focuses on a FinFET device structure that also features an ultra-thin body. This invention details a structure that includes an oxide layer over a substrate and a fin structure made from a semiconductor layer. The fin structure is composed of three portions, with the second portion situated between the first and third portions, forming a U-shaped trench. A gate structure is then integrated into this trench, further optimizing the device's functionality.

Career Highlights

Mu-Shih Yeh is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this esteemed company has allowed him to push the boundaries of semiconductor technology and contribute to the development of cutting-edge devices.

Collaborations

Throughout his career, Mu-Shih Yeh has collaborated with talented individuals such as Cheng-Chieh Lai and Kuang-Hsin Chen. These collaborations have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.

Conclusion

Mu-Shih Yeh's contributions to FinFET technology exemplify his dedication to innovation in the semiconductor industry. His patents reflect a commitment to enhancing electronic device performance through advanced engineering techniques. His work continues to influence the future of semiconductor technology.

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