Company Filing History:
Years Active: 2004
Title: The Innovations of Msahiro Hirano
Introduction
Msahiro Hirano is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology. His work has led to advancements in light-emitting diodes and laser diodes, showcasing his expertise and innovative spirit.
Latest Patents
Hirano holds a patent for a light-emitting diode and laser diode that features an n-type ZnO layer and a p-type semiconductor laser. This invention includes an ultraviolet-light-emitting semiconductor diode that comprises an n-type ZnO layer with luminous characteristics formed on a transparent substrate. The p-type semiconductor layer is selected from materials such as SrCuO, CuAlO, and CuGaO, which are formed on the n-type ZnO layer to create a p-n junction. The transparent substrate is ideally a single crystal substrate with an atomically flat yttria-stabilized zirconia (YSZ) surface. The n-type ZnO layer is formed at temperatures ranging from 200 to 1200 °C, and the p-type semiconductor layer can be formed without heating the substrate, with subsequent ultraviolet light irradiation to promote crystallization.
Career Highlights
Hirano is affiliated with the Japan Science and Technology Agency, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in various technologies, particularly in the field of optoelectronics.
Collaborations
Hirano has collaborated with notable colleagues, including Hideo Hosono and Hiromichi Ota. Their combined expertise has contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Msahiro Hirano's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor in Japan. His work continues to influence the development of advanced light-emitting devices.