Japan Science and Technology Agency

Msahiro Hirano

Hideo Hosono

Hiromichi Ota

Kenichi Kawamura

Nobuhiko Sarukura

An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu O , CuAlO and CuGaO , which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200&deg; C., and the p-type semiconductor layer selected from the group of SrCu O , CuAlO and CuGaO is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.

Growing community of inventors

Tokyo, Japan

Msahiro Hirano