Koganei, Japan

Morio Inoue


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Morio Inoue: Innovator in Semiconductor Technology

Introduction

Morio Inoue is a notable inventor based in Koganei, Japan. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance production efficiency and reliability.

Latest Patents

Inoue holds a patent for a "Method for producing semiconductor devices and cutting fuses." This innovative method involves producing a semiconductor device that can replace defective circuits with redundant ones. After a fuse is cut using a laser beam, a specific portion is irradiated in a controlled gas atmosphere with an optical ray. This process selectively forms a CVD film, creating a protective layer over the fuse. This approach simplifies the formation of the protection film post-fuse cutting, thereby reducing production costs while improving yield and reliability.

Career Highlights

Morio Inoue is associated with Hitachi, Ltd., a leading company in technology and electronics. His work has been instrumental in advancing semiconductor manufacturing processes, showcasing his expertise and commitment to innovation.

Collaborations

Inoue has collaborated with notable colleagues such as Takao Kawanabe and Mikio Hongo. Their combined efforts have contributed to the development of advanced technologies in the semiconductor industry.

Conclusion

Morio Inoue's contributions to semiconductor technology through his innovative patent demonstrate his significant role in enhancing production methods. His work continues to influence the industry positively.

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