This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Xiamen Silan Advanced Compound Semiconductor Co., Ltd. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Moran Gao: Semiconductor Light-Emitting Invention
Introduction
Moran Gao is an inventor associated with Xiamen, China, and Xiamen Silan Advanced Compound Semiconductor Co., Ltd. Her work includes a patented semiconductor light-emitting element and its manufacturing method.
Latest Patents
Gao is credited with 1 patent: “Semiconductor Light Emitting Element and Manufacture Method Thereof.” The invention describes a device built from a substrate, n-type semiconductor layer, quantum well layer, and p-type semiconductor layer, with surface-plasmon-related layers arranged in specified positions. The patent states that this design can improve quantum efficiency, light-emission uniformity, and resistance to electrostatic discharge.
Career Highlights
Gao’s listed patent focuses on semiconductor device structure and manufacturing, with the stated goal of enhancing light-emitting performance and reliability. She is associated with Xiamen Silan Advanced Compound Semiconductor Co., Ltd.
Collaborations
Gao’s listed coworkers include Jinjian Zheng and Jingfeng Bi.
Conclusion
Moran Gao’s patent describes a semiconductor light-emitting design intended to improve efficiency, uniformity, and electrostatic-discharge resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile