Hwaseong, South Korea

Moon Hee Oh

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021-2023.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Moon Hee Oh

Introduction

Moon Hee Oh is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 4 patents. His work is particularly recognized for its impact on high bandwidth memory technology.

Latest Patents

One of Moon Hee Oh's latest patents is a high bandwidth memory device and system device having the same. This invention includes a memory device that consists of a base die and a stack of memory dies. The base die features a plurality of first input/output (I/O) terminals for command/address and data, as well as second I/O terminals for direct access. The method involves receiving commands and data at the first I/O terminals and transmitting them to the stack of memory dies. Another notable patent focuses on a high bandwidth memory device that includes a base die and multiple memory dies stacked on it. This device is designed to enhance the efficiency of data transmission through various input buffers and monitoring units.

Career Highlights

Moon Hee Oh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory technology, contributing to advancements that benefit a wide range of applications.

Collaborations

He has collaborated with notable coworkers, including Jun Gyu Lee and Reum Oh, who have also contributed to the innovative projects at Samsung.

Conclusion

Moon Hee Oh's contributions to high bandwidth memory technology exemplify the importance of innovation in the tech industry. His patents reflect a commitment to advancing memory device capabilities, which will have lasting impacts on future technologies.

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