Gerlingen, Germany

Monika Lorkowski

This inventor holds 1 USPTO granted patent. Top assignee: Robert Bosch. Active years: 1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Monika Lorkowski. Retrieved from https://idiyas.com/inventor/monika-lorkowski

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Monika Lorkowski: Innovator in Semiconductor Technology

Introduction

Monika Lorkowski is a prominent inventor based in Gerlingen, Germany. She has made significant contributions to the field of semiconductor technology, particularly through her innovative methods for planarizing trench structures. Her work has implications for the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Monika holds a patent for a method of planarizing trench-like structures. This method involves filling trench-like structures on semiconductor substrates with a pre-polymer, which is then hardened and expanded. This innovative approach enhances the manufacturing process and improves the quality of semiconductor devices.

Career Highlights

Monika Lorkowski is currently employed at Robert Bosch, a leading global supplier of technology and services. Her role at the company allows her to apply her expertise in semiconductor technology and contribute to cutting-edge advancements in the field.

Collaborations

Throughout her career, Monika has collaborated with notable colleagues, including Klaus-Michael Mayer and Lothar Weber. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their respective fields.

Conclusion

Monika Lorkowski is a trailblazer in semiconductor technology, with a focus on improving manufacturing processes through her innovative methods. Her contributions continue to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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