Company Filing History:
Years Active: 2017
Title: Monica Miccichè: Innovator in Semiconductor Technology
Introduction
Monica Miccichè is a prominent inventor based in Enna, Italy. She has made significant contributions to the field of semiconductor technology, particularly with her innovative designs and patents. Her work has garnered attention for its potential applications in various electronic devices.
Latest Patents
Monica holds a patent for the "Integrated vertical trench MOS transistor." This VTMOS transistor is designed using semiconductor material of a first type of conductivity. It features a body region of a second type of conductivity and a source region of the first type. The gate region extends into the main surface through the body region and is insulated from the semiconductor material. Additionally, a region of the gate extends onto the main surface, insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into the insulated region, while a cathode region of the second type is in contact with the anode region. This configuration defines a thermal diode that is electrically insulated from the chip.
Career Highlights
Monica Miccichè is currently employed at STMicroelectronics S.r.l., where she continues to innovate and develop new technologies. Her work at this leading semiconductor company has allowed her to collaborate with other talented professionals in the field.
Collaborations
Some of Monica's notable coworkers include Antonio Giuseppe Grimaldi and Davide Giuseppe Patti. Their collaborative efforts contribute to the advancement of semiconductor technologies and innovations.
Conclusion
Monica Miccichè is a trailblazer in the semiconductor industry, with her patent for the Integrated vertical trench MOS transistor showcasing her innovative spirit. Her contributions to STMicroelectronics S.r.l. and collaborations with esteemed colleagues further highlight her impact on technology.