The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Nov. 23, 2015
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Antonio Giuseppe Grimaldi, S. Giovanni La Punta, IT;
Davide Giuseppe Patti, Mascalucia, IT;
Monica Miccichè, Enna, IT;
Salvatore Liotta, Aci S. Antonio, IT;
Angela Longhitano, Belpasso, IT;
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Abstract
A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.