Sunnyvale, CA, United States of America

Moiz Khambaty

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1995-1996

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2 patents (USPTO):Explore Patents

Title: Moiz Khambaty: Innovator in CMOS Technology

Introduction

Moiz Khambaty is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of semiconductor technology, particularly in CMOS processes and circuits. With a total of two patents to his name, Khambaty's work is recognized for its innovative approach to transistor technology.

Latest Patents

Khambaty's latest patents focus on a groundbreaking method of threshold adjust implantation in CMOS circuits. This method involves implanting some of the PMOS FETs' channels to achieve a threshold voltage of substantially zero volts. The process includes an additional implantation of ions into the PMOS FETs' channels, which is essential for raising the threshold voltage from its native state to a normal operational level. This innovation has the potential to enhance the performance and efficiency of CMOS technology.

Career Highlights

Moiz Khambaty is currently employed at Imp Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in CMOS processes has positioned him as a valuable asset to his company and the broader field of electronics.

Collaborations

Khambaty collaborates with Corey D Petersen, leveraging their combined expertise to push the boundaries of innovation in semiconductor technology.

Conclusion

Moiz Khambaty's contributions to CMOS technology through his patents and work at Imp Inc. highlight his role as a key innovator in the field. His advancements in threshold adjust implantation are paving the way for future developments in semiconductor efficiency and performance.

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