Stuttgart, Germany

Mohammed Alomari

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Institut Fur Mikroelektronik Stuttgart. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mohammed Alomari. Retrieved from https://idiyas.com/inventor/mohammed-alomari

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Mohammed Alomari: Innovator in Semiconductor Technology

Introduction

Mohammed Alomari is a notable inventor based in Stuttgart, Germany, recognized for his contributions to semiconductor technology. With a keen focus on innovation, he has developed a significant patent that advances the understanding and capabilities of enhancement-type transistor structures.

Latest Patents

Alomari holds a patent for a semiconductor element featuring an enhancement-type transistor structure. This invention encompasses a unique layer construction consisting of a base substrate, a first semiconductor layer, and a second semiconductor layer, meticulously arranged in a vertical alignment. The design incorporates a source electrode, a gate electrode, and a drain electrode, strategically spaced in a transverse direction. Notably, the semiconductor layers are composed of different group III nitride materials which allow the formation of a 2D electron gas at their boundary. The innovative design also includes holes in the region of the gate electrode with multiple fins made of group III nitride materials, enhancing its performance.

Career Highlights

Currently, Mohammed Alomari is employed at the Institut für Mikroelektronik Stuttgart, a research institution dedicated to advancements in microelectronics. His role involves extensive research and development in semiconductor innovations, further establishing him as a key figure in this field.

Collaborations

Throughout his career, Alomari has collaborated with distinguished colleagues, including Joachim N. Burghartz and Muhammad Alshahed. These collaborations have allowed for a synergy of ideas and expertise, contributing to successful projects and innovative research in the semiconductor domain.

Conclusion

In conclusion, Mohammed Alomari embodies the spirit of innovation within the semiconductor industry. His patent for an enhancement-type transistor structure showcases his dedication to advancing technology and his substantial impact on the field. Through his work at the Institut für Mikroelektronik Stuttgart and productive collaborations, Alomari continues to drive progress in semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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