Company Filing History:
Years Active: 2021
Title: Innovations of Mohammad Aftab Alam
Introduction
Mohammad Aftab Alam is a notable inventor based in Masaurhi, India. He has made significant contributions to the field of memory devices, particularly with his innovative patent that addresses retention leakage in SRAM technology. His work is recognized for its potential impact on the efficiency and reliability of memory systems.
Latest Patents
One of Mohammad Aftab Alam's key patents is titled "Reduced Retention Leakage SRAM." This invention involves a memory device that includes a memory array powered between virtual supply and virtual ground nodes. A dummy memory array is powered between first and second nodes. A virtual supply generation circuit generates a virtual supply voltage at the virtual supply node as a function of a first control voltage. Additionally, a virtual ground generation circuit generates a virtual ground at the virtual ground node based on a second control voltage. The first control voltage generation circuit, coupled between the first node and a power supply voltage, generates the first control voltage as tracking retention noise margin (RNM) of the memory array, with the first control voltage falling as the RNM decreases. Similarly, the second control voltage generation circuit, coupled between the second node and ground, generates the second control voltage as tracking RNM of the memory array, with the second control voltage rising as the RNM decreases.
Career Highlights
Mohammad Aftab Alam is currently associated with STMicroelectronics International N.V., a leading global semiconductor company. His role at STMicroelectronics allows him to work on cutting-edge technologies and contribute to advancements in memory device design.
Collaborations
He collaborates with various professionals in the field, including his coworker Ashish Kumar. Their combined expertise enhances the innovative capabilities within their projects.
Conclusion
Mohammad Aftab Alam's contributions to the field of memory devices through his patent on reduced retention leakage SRAM exemplify his innovative spirit and technical expertise. His work continues to influence advancements in memory technology, showcasing the importance of inventors in driving progress.