Location History:
- Hiratsuka, JP (1996)
- Hadano, JP (1997 - 1999)
Company Filing History:
Years Active: 1996-1999
Title: Mitsuo Kono: Innovator in Silicon Technology
Introduction
Mitsuo Kono is a prominent inventor based in Hadano, Japan. He has made significant contributions to the field of silicon technology, holding a total of 4 patents. His work focuses on improving the fabrication and analysis of silicon wafers, which are essential components in various electronic devices.
Latest Patents
Kono's latest patents include a method for fabricating an SOI substrate. This innovative technique addresses thickness variations in the silicon layer, ensuring that devices fabricated onto the silicon layer exhibit decreased threshold voltage variation. By measuring the local thickness distribution after bonding two wafers, Kono's method allows for precise adjustments in doping concentration, resulting in minimal threshold voltage variation. Another notable patent is a method for analyzing silicon wafers. This simple evaluation method utilizes the SPV technique to measure the diffusion lengths of minority carriers under different lighting conditions. The calculated diffusion length correlates strongly with the dielectric breakdown of the oxide layer, facilitating easier evaluations during silicon wafer fabrication.
Career Highlights
Mitsuo Kono has established himself as a key figure in the semiconductor industry through his innovative approaches and practical solutions. His work at Komatsu Electronic Metals Co., Ltd. has further solidified his reputation as a leading inventor in silicon technology.
Collaborations
Kono has collaborated with notable colleagues such as Kei Matsumoto and Shiro Yoshino, contributing to advancements in their shared field of expertise.
Conclusion
Mitsuo Kono's contributions to silicon technology through his patents and collaborative efforts have made a lasting impact on the industry. His innovative methods continue to enhance the performance and reliability of silicon-based devices.