The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Jun. 27, 1996
Noriyuki Uemura, Hiratsuka, JP;
Mitsuo Kono, Hadano, JP;
Komatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Abstract
An epitaxial wafer capable of removing impurities and oxide layers thereon having a high dielectric strength is disclosed. A substrate wafer 1 in which laser-scattering centers have a density of higher than 5.times.10.sup.6 /cm.sup.3 is provided. An epitaxial layer 3 is formed by epitaxial growth on a completely clean surface of the substrate. The surface of the epitaxial layer consists of a non-defect layer which is provided for device active regions. Moreover, a high density of laser-scattering centers are distributed near the interface of the epitaxial layer and the substrate wafer and the interior of the substrate, thus providing for a wafer capable of removing impurities.