Tsuchiura, Japan

Mitsuo Kasamatsu

This inventor holds 1 USPTO granted patent. Top assignee: National Institute for Research in Inorganic Materials. Active years: 1994.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Mitsuo Kasamatsu: Innovator in Boron Nitride Technology

Introduction

Mitsuo Kasamatsu is a notable inventor based in Tsuchiura, Japan. He has made significant contributions to the field of materials science, particularly in the development of hard boron nitride.

Latest Patents

Kasamatsu holds a patent for a method of making hard boron nitride by a plasma CVD method employing beam irradiation. This innovative process involves introducing a boron source gas and a nitrogen source gas into a plasma generated by a working gas, such as helium or hydrogen, under specific pressure conditions. The method includes several steps, such as maintaining the substrate temperature and converting activating innoculations into precursor activating innoculations necessary for forming a hard boron nitride film.

Career Highlights

Mitsuo Kasamatsu is affiliated with the National Institute for Research in Inorganic Materials, where he has conducted extensive research and development in advanced materials. His work has been instrumental in enhancing the properties and applications of boron nitride.

Collaborations

Kasamatsu has collaborated with notable colleagues, including Shojiro Komatsu and Kawakatsu Yamada, contributing to various research projects and advancements in the field.

Conclusion

Mitsuo Kasamatsu's innovative work in the development of hard boron nitride showcases his expertise and dedication to materials science. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
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