Ibaraki, Japan

Mitsuhiro Sukegawa

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Renesas Electronics Corporation. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuhiro Sukegawa. Retrieved from https://idiyas.com/inventor/mitsuhiro-sukegawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Mitsuhiro Sukegawa: Innovator in Semiconductor Manufacturing

Introduction

Mitsuhiro Sukegawa is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods that enhance device performance.

Latest Patents

Sukegawa holds a patent for a method of manufacturing a semiconductor device. This invention aims to provide a semiconductor device capable of having improved adhesion between a plating film and a wiring layer. The method includes several steps: forming a wiring layer with an oxide film, removing a portion of the oxide film through dry etching to create an opening, forming a passivation film made of insulating resin, and growing a plating film on the exposed wiring layer.

Career Highlights

Mitsuhiro Sukegawa is currently employed at Renesas Electronics Corporation, a leading company in the semiconductor industry. His work focuses on developing advanced manufacturing techniques that contribute to the efficiency and reliability of semiconductor devices.

Collaborations

Sukegawa has collaborated with notable colleagues, including Yoshinori Matsumuro and Toshikazu Hanawa. Their combined expertise has fostered innovation and progress in semiconductor technology.

Conclusion

Mitsuhiro Sukegawa's contributions to semiconductor manufacturing exemplify the importance of innovation in technology. His patented methods enhance device performance and demonstrate his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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