Kadoma, Japan

Mitsuhiro Kani

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Works, Ltd.. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mitsuhiro Kani. Retrieved from https://idiyas.com/inventor/mitsuhiro-kani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Mitsuhiro Kani: Innovator in Semiconductor Technology

Introduction

Mitsuhiro Kani is a notable inventor based in Kadoma, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances the integration of integrated circuits.

Latest Patents

Mitsuhiro Kani holds 1 patent for a semiconductor device. This device features a circuit pattern of a conductive thin film formed on a ceramic substrate through etching. An integrated circuit (IC) chip is connected to the etched circuit pattern via gang-bonding, allowing direct contact between the conduction parts of the circuit and the IC chip. This design enables a denser circuit pattern, contributing to higher integration levels of the IC chip.

Career Highlights

Kani has been associated with Matsushita Electric Works, Ltd., where he has furthered his research and development efforts in semiconductor technology. His work has been instrumental in advancing the capabilities of electronic devices.

Collaborations

Mitsuhiro Kani has collaborated with notable colleagues such as Shigenari Takami and Tatsuhiko Irie. Their combined expertise has fostered innovation in their projects.

Conclusion

Mitsuhiro Kani's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His work continues to influence advancements in integrated circuit design and functionality.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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