Company Filing History:
Years Active: 1996-1999
Title: Mitsugu Oshima: Innovator in Semiconductor Technology
Introduction
Mitsugu Oshima is a prominent inventor based in Yamanashi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on integrated circuit devices and memory cell constructions, showcasing his expertise in this advanced area of electronics.
Latest Patents
Oshima's latest patents include a semiconductor integrated circuit device featuring a capacitance element. This invention involves a SRAM (Static Random Access Memory) with memory cells constructed to include transfer MISFETs controlled by word lines. Additionally, it incorporates a flip-flop circuit with driver MISFETs and load MISFETs. The design includes large area plate electrodes fixed on predetermined power source lines, arranged over the load MISFETs, with specific openings formed over the offset region. A silicon nitride film, permeable to hydrogen but not to humidity, is also a key component of this innovative design.
Career Highlights
Mitsugu Oshima is currently employed at Hitachi, Ltd., where he continues to develop cutting-edge technologies in semiconductor devices. His work has been instrumental in advancing the capabilities of integrated circuits, contributing to the efficiency and performance of electronic devices.
Collaborations
Oshima has collaborated with notable colleagues in the field, including Shuji Ikeda and Koichi Imato. These partnerships have fostered innovation and have led to the development of groundbreaking technologies in semiconductor applications.
Conclusion
Mitsugu Oshima's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices, making a lasting impact on the field.