Tbilisi, Georgia

Misha Vepkhvadze

This inventor holds 1 USPTO granted patent. Top assignee: Borealis Technical Limited. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Misha Vepkhvadze. Retrieved from https://idiyas.com/inventor/misha-vepkhvadze

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Misha Vepkhvadze: Innovator in Electrode Fabrication

Introduction

Misha Vepkhvadze is a notable inventor based in Tbilisi, Georgia. He has made significant contributions to the field of electrode fabrication, showcasing his innovative spirit through his patented inventions.

Latest Patents

Misha holds a patent for a method titled "Surface pairs." This invention involves a process for fabricating an electrode pair precursor. The method includes creating one or more indents on a substrate surface, depositing layers of material to form electrode precursors, and ultimately constructing a third layer on top of the second precursor. This innovative approach enhances the efficiency and effectiveness of electrode production.

Career Highlights

Misha is currently employed at Borealis Technical Limited, where he applies his expertise in electrode fabrication. His work has positioned him as a key player in the development of advanced materials and technologies.

Collaborations

Misha collaborates with Avto Tavkhelidze, a talented woman in the field. Together, they work on innovative projects that push the boundaries of technology and materials science.

Conclusion

Misha Vepkhvadze's contributions to electrode fabrication through his patent and collaboration with Avto Tavkhelidze highlight his role as an influential inventor. His work continues to inspire advancements in the field of materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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