Moshave Bet Elazari, Israel

Mirta Perlman

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mirta Perlman. Retrieved from https://idiyas.com/inventor/mirta-perlman-h0sydvtu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Mirta Perlman and Defect-Detection Innovation

Introduction

Mirta Perlman is an inventor associated with Moshave Bet Elazari, Israel, and Applied Materials, Inc. Her patent work addresses methods for detecting defects on substrates, including wafers.

Latest Patents

Perlman is named on one patent: “Multi-Detector Defect Detection System and a Method for Detecting Defects.” The invention describes inspecting a substrate by collecting at least two detection signals, each reflecting light scattered in a distinct direction. It calculates one or more wafer-element attribute values from those signals, compares them with corresponding reference values, and uses the relationship between the values and a threshold to determine whether a defect is present. Perlman’s record lists 1 patent.

Career Highlights

Perlman’s listed patent is connected to her work at Applied Materials, Inc., a company associated with semiconductor manufacturing technologies. The invention focuses on combining signals from multiple detection directions to support substrate inspection.

Collaborations

The supplied information lists Daniel I Some and Evgeni Levin as Perlman’s coworkers. They are associated with her professional context, though the information provided does not specify their roles in the patent.

Conclusion

Mirta Perlman’s patent contribution concerns a multi-detector approach to identifying substrate defects, using scattered-light signals, reference values, and thresholds to support inspection.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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