Wuppertal, Germany

Miriam Schwan

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2026.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Miriam Schwan

Introduction

Miriam Schwan is a notable inventor based in Wuppertal, Germany. She has made significant contributions to the field of technology, particularly in the development of advanced materials for electronic devices. Her work is characterized by a focus on sustainability and innovation.

Latest Patents

Miriam Schwan holds a patent for a "Spin valve device with precious metal-free antiferromagnet in stabilization layer." This device features a spin valve layer sequence that includes a first magnetic layer with a variable direction of magnetization and a second magnetic layer with a fixed direction of magnetization. The stabilization layer is designed to stabilize the fixed direction of magnetization of the second magnetic layer, utilizing a precious metal-free antiferromagnet. This innovation is crucial for enhancing the performance of spintronic devices.

Career Highlights

Miriam Schwan is currently employed at Infineon Technologies AG, where she continues to push the boundaries of technology. Her work at Infineon has allowed her to collaborate with leading experts in the field and contribute to groundbreaking projects.

Collaborations

Some of her notable coworkers include Klemens Prügl and Bernhard Endres. Their collaborative efforts have led to advancements in the development of new technologies and materials.

Conclusion

Miriam Schwan's innovative work in the field of spintronic devices exemplifies her commitment to advancing technology while prioritizing sustainability. Her contributions are paving the way for future developments in electronic materials.

Profile summary based on public USPTO records.
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