Chiba, Japan

Mio Mukasa


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Mio Mukasa: Innovator in Semiconductor Technology

Introduction

Mio Mukasa is a prominent inventor based in Chiba, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of devices that enhance electrostatic discharge (ESD) protection.

Latest Patents

Mio Mukasa holds a patent for a semiconductor device that features an ESD protection diode and a vertical MOSFET. This innovative design achieves desired ESD tolerance without compromising the active region size or increasing the overall chip size. The semiconductor device comprises a substrate, a drain region, a source region, and a base region, along with a gate electrode made of a first polysilicon layer. The configuration allows for the formation of a channel in the base region, while a bidirectional diode is arranged in a specific order to optimize performance.

Career Highlights

Mio Mukasa is currently employed at Ablic Inc., where she continues to push the boundaries of semiconductor technology. Her work has garnered attention for its practical applications and potential to improve device reliability in various electronic systems.

Collaborations

Mio collaborates with talented colleagues, including Yuki Osuga and Hirofumi Harada, who contribute to her innovative projects and research endeavors.

Conclusion

Mio Mukasa's contributions to semiconductor technology exemplify her dedication to innovation and excellence in her field. Her patent for a semiconductor device showcases her ability to solve complex engineering challenges while advancing technology.

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