Daejeon, South Korea

Minyeul Lee

This inventor holds 1 USPTO granted patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Minyeul Lee. Retrieved from https://idiyas.com/inventor/minyeul-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Minyeul Lee - Innovator in Dielectric Structures

Introduction

Minyeul Lee is an inventor based in Daejeon, South Korea. He is known for his innovative work in the field of dielectric structures. Although he currently holds no granted patents, his contributions to the field are noteworthy.

Latest Patent Applications

One of his significant patent applications is titled "DIELECTRIC STRUCTURE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME." This application describes a dielectric structure that includes an insulating layer extending in a first direction. It features a plurality of conductor layers disposed on a first surface of the insulating layer, spaced apart from each other in the first direction. Additionally, at least one semiconductor layer is positioned on the second surface of the insulating layer, which is opposite to the first surface. This semiconductor layer overlaps with at least two adjacent conductor layers in a second direction that intersects the first direction. The structure also includes a first protective layer covering the plurality of conductor layers on the first surface and a second protective layer covering the semiconductor layer on the second surface.

Conclusion

Minyeul Lee's work in dielectric structures showcases his innovative spirit and potential impact on the field. His patent application reflects a commitment to advancing technology in substrate processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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